Searching US Patent Collection...
Results of Search in US Patent Collection db for:
(AN/"unity semiconductor" OR PN/7180772): 136 patents.
Hits 1 through 50
out of 136
| PAT. NO. | | Title |
| 1 |
8,111,572 |
 |
Disturb control circuits and methods to control memory disturbs among
multiple layers of memory
|
| 2 |
8,065,478 |
 |
Performing data operations using non-volatile third dimension memory
|
| 3 |
8,065,474 |
 |
Memory device with vertically embedded non-flash non-volatile memory for emulation of NAND flash memory
|
| 4 |
8,064,284 |
 |
Method for accessing vertically stacked embedded non-flash re-writable
non-volatile memory
|
| 5 |
8,064,276 |
 |
Circuitry and method for indicating a memory
|
| 6 |
8,064,256 |
 |
Non-volatile FIFO with third dimension memory
|
| 7 |
8,064,238 |
 |
System using non-volatile resistivity-sensitive memory for emulation of
embedded flash memory
|
| 8 |
8,062,942 |
 |
Method for fabricating multi-resistive state memory devices
|
| 9 |
8,060,717 |
 |
Securing non-volatile data in an embedded memory device
|
| 10 |
8,045,364 |
 |
Non-volatile memory device ion barrier
|
| 11 |
8,032,692 |
 |
System for accessing non-volatile memory
|
| 12 |
8,031,545 |
 |
Low read current architecture for memory
|
| 13 |
8,031,510 |
 |
Ion barrier cap
|
| 14 |
8,031,509 |
 |
Conductive metal oxide structures in non-volatile re-writable memory
devices
|
| 15 |
8,027,215 |
 |
Array operation using a schottky diode as a non-ohmic isolation device
|
| 16 |
8,020,132 |
 |
Combined memories in integrated circuits
|
| 17 |
8,018,790 |
 |
Serial memory interface
|
| 18 |
8,004,309 |
 |
Programmable logic device structure using third dimensional memory
|
| 19 |
8,003,511 |
 |
Memory cell formation using ion implant isolated conductive metal oxide |
| 20 |
8,000,138 |
 |
Scaleable memory systems using third dimension memory
|
| 21 |
8,000,122 |
 |
Media player with non-volatile memory
|
| 22 |
8,000,121 |
 |
Solid state drive with non-volatile memory for a media device
|
| 23 |
7,999,571 |
 |
State machines using non-volatile re-writeable two-terminal
resistivity-sensitive memories
|
| 24 |
7,996,600 |
 |
Memory emulation in an electronic organizer
|
| 25 |
7,995,371 |
 |
Threshold device for a memory array
|
| 26 |
7,990,762 |
 |
Integrated circuits to control access to multiple layers of memory
|
| 27 |
7,986,567 |
 |
Read buffering systems for accessing multiple layers of memory in
integrated circuits
|
| 28 |
7,985,963 |
 |
Memory using variable tunnel barrier widths
|
| 29 |
7,978,501 |
 |
Method for contemporaneous margin verification and memory access for
memory cells in cross-point memory arrays
|
| 30 |
7,961,529 |
 |
Processor including vertically stacked third-dimensional embedded
re-writeable non-volatile memory and registers
|
| 31 |
7,961,527 |
 |
Buffering systems for accessing multiple layers of memory in integrated circuits
|
| 32 |
7,961,510 |
 |
Integrated circuits to control access to multiple layers of memory in a solid state drive
|
| 33 |
7,917,691 |
 |
Memory device with vertically embedded non-flash non-volatile memory for
emulation of NAND flash memory
|
| 34 |
7,913,049 |
 |
Securing non-volatile data in an embedded memory device
|
| 35 |
7,903,485 |
 |
Integrated circuits and methods to compensate for defective non-volatile
embedded memory in one or more layers of vertically stacked non-volatile
embedded memory
|
| 36 |
7,902,868 |
 |
Field programmable gate arrays using resistivity sensitive memories
|
| 37 |
7,898,841 |
 |
Preservation circuit and methods to maintain values representing data in
one or more layers of memory
|
| 38 |
7,897,951 |
 |
Continuous plane of thin-film materials for a two-terminal cross-point
memory
|
| 39 |
7,889,591 |
 |
ASIC including vertically stacked embedded non-flash re-writable
non-volatile memory
|
| 40 |
7,889,571 |
 |
Buffering systems methods for accessing multiple layers of memory in
integrated circuits
|
| 41 |
7,889,539 |
 |
Multi-resistive state memory device with conductive oxide electrodes
|
| 42 |
7,888,711 |
 |
Continuous plane of thin-film materials for a two-terminal cross-point
memory
|
| 43 |
7,884,349 |
 |
Selection device for re-writable memory
|
| 44 |
7,877,541 |
 |
Method and system for accessing non-volatile memory
|
| 45 |
7,876,594 |
 |
Memory emulation using resistivity-sensitive memory
|
| 46 |
7,870,333 |
 |
Performing data operations using non-volatile third dimension memory
|
| 47 |
7,847,330 |
 |
Four vertically stacked memory layers in a non-volatile re-writeable
memory device
|
| 48 |
7,839,702 |
 |
Three-dimensional non-volatile register with an oxygen-ion-based memory element and a vertically-stacked register logic
|
| 49 |
7,836,273 |
 |
Fast data access through page manipulation
|
| 50 |
7,834,660 |
 |
State machines using resistivity-sensitive memories
|